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1 mrf20060r MRF20060RS motorola rf device data the rf submicron bipolar line the mrf20060r and MRF20060RS are designed for class ab broadband commercial and industrial applications at frequencies from 1800 to 2000 mhz. the high gain, excellent linearity and broadband performance of these devices make them ideal for largesignal, common emitter class ab amplifier applica- tions. these devices are suitable for frequency modulated, amplitude modulated and multicarrier base station rf power amplifiers. ? guaranteed twotone performance at 2000 mhz, 26 volts output power e 60 watts (pep) power gain e 9 db efficiency e 33% intermodulation distortion e 30 dbc ? characterized with series equivalent largesignal impedance parameters ? sparameter characterization at high bias levels ? excellent thermal stability ? capable of handling 3:1 vswr @ 26 vdc, 2000 mhz, 60 watts (pep) output power ? designed for fm, tdma, cdma and multicarrier applications ? test fixtures available at: http://motsps.com/rf/designtds/ note: not suitable for class a operation. maximum ratings rating symbol value unit collectoremitter voltage (i b = 0 ma) v ceo 25 vdc collectoremitter voltage v ces 60 vdc collectorbase voltage v cbo 60 vdc collectoremitter voltage (r be = 100 ohm) v cer 30 vdc baseemitter voltage v eb 3 vdc collector current continuous i c 8 adc total device dissipation @ t c = 25 c derate above 25 c p d 250 1.43 watts w/ c storage temperature range t stg 65 to +150 c operating junction temperature t j 200 c thermal characteristics rating symbol max unit thermal resistance, junction to case r q jc 0.7 c/w order this document by mrf20060r/d

semiconductor technical data 60 w, 2000 mhz rf power broadband npn bipolar case 45106, style 1 (mrf20060r) case 451a03, style 1 (MRF20060RS) ? motorola, inc. 2000 rev 3
mrf20060r MRF20060RS 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectoremitter breakdown voltage (i c = 50 madc, i b = 0) v (br)ceo 25 28 e vdc collectoremitter breakdown voltage (i c = 50 madc, v be = 0) v (br)ces 60 69 e vdc collectorbase breakdown voltage (i c = 50 madc, i e = 0) v (br)cbo 60 69 e vdc reverse baseemitter breakdown voltage (i b = 10 madc, i c = 0) v (br)ebo 3 3.5 e vdc zero base voltage collector leakage current (v ce = 30 vdc, v be = 0) i ces e e 10 madc on characteristics dc current gain (v ce = 5 vdc, i c = 1 adc) h fe 20 40 80 e dynamic characteristics output capacitance (v cb = 26 vdc, i e = 0, f = 1.0 mhz) (1) c ob e 55 e pf functional tests (in motorola test fixture) commonemitter amplifier power gain (v cc = 26 vdc, p out = 60 watts (pep), i cq = 200 ma, f 1 = 2000.0 mhz, f 2 = 2000.1 mhz) g pe 9 9.8 e db collector efficiency (v cc = 26 vdc, p out = 60 watts (pep), i cq = 200 ma, f 1 = 2000.0 mhz, f 2 = 2000.1 mhz) h 33 35 e % intermodulation distortion (v cc = 26 vdc, p out = 60 watts (pep), i cq = 200 ma, f 1 = 2000.0 mhz, f 2 = 2000.1 mhz) imd e 32 30 db input return loss (v cc = 26 vdc, p out = 60 watts (pep), i cq = 200 ma, f 1 = 2000.0 mhz, f 2 = 2000.1 mhz) irl 12 19 e db output mismatch stress (v cc = 26 vdc, p out = 60 watts (pep), i cq = 200 ma, f 1 = 2000.0 mhz, f 2 = 2000.1 mhz, vswr = 3:1, all phase angles at frequency of test) y no degradation in output power (1) for information only. this part is collector matched.
3 mrf20060r MRF20060RS motorola rf device data figure 1. 1.93 2 ghz test fixture electrical schematic b1 ferrite bead, p/n 5659065/3b, ferroxcube c1 100 m f, 50 v, electrolytic capacitor, mallory c2, c4, c13 0.64.0 pf, variable capacitor, gigatrim, johanson c3, c14 0.1 m f, chip capacitor, kemit c5 15 pf, b case chip capacitor, atc c6, c12 1000 pf, b case chip capacitor, atc c7, c9 91 pf, b case chip capacitor, atc c8, c10 24 pf, b case chip capacitor, atc c11 13 pf, b case chip capacitor, atc c15 470 m f, 50 v, electrolytic capacitor, mallory d1 diode, motorola (murs160t3) l1, l5 12 turns, 22 awg, 0.140 choke l2, l4 .5 inch of 20 awg l3 12.5 nh inductor r1 2 x 130 w , 1/8 w chip resistor, rohm r2 2 x 100 w , 1/8 w chip resistor, rohm r3, r4 10 w , 1/2 w, resistor q1 transistor, pnp motorola (bd136) q2 transistor, npn motorola (mjd47) board glass teflon ? , arlon gx03005522, e r rf input rf output dut z10 z1 z2 z3 z4 z5 z6 z7 z9 v bb v cc q2 q1 d1 r1 c1 c3 c6 r3 l1 l3 r2 c7 c8 l2 c5 c2 c4 c9 c10 l4 c13 b1 c12 c14 c15 r4 l5 c11 + +
mrf20060r MRF20060RS 4 motorola rf device data typical characteristics g pe , power gain (db) g pe , gain (db) figure 2. output power & power gain versus input power 60 p in , input power (watts) 10 0 4 20 40 30 figure 3. output power versus frequency 0 1850 f, frequency (mhz) 70 40 10 2610 60 p out , output power (watts) 1800 2000 0 p out , output power (watts) 50 11 10 9 8 g pe , gain (db) 1900 1950 figure 4. intermodulation distortion versus output power 20 p out , output power (watts) pep 70 40 figure 5. power gain and intermodulation distortion versus supply voltage 10 v cc , collector supply voltage (vdc) 9 20 60 80 8 imd, intermodulation distortion (dbc) figure 6. intermodulation distortion versus output power 0.1 p out , output power (watts) pep 35 50 10 25 figure 7. power gain versus output power p out , output power (watts) pep 6 1.0 10 10 1.0 100 100 0.1 0 7 8 9 9.5 8.5 7.5 20 22 18 40 30 20 imd, intermodulation distortion (dbc) 40 35 imd, intermodulation distortion (dbc) v cc = 26 vdc i cq = 200 ma f = 2000 mhz single tone 70 24 26 28 11 10.5 30 25 20 15 10 60 50 40 30 20 50 30 p out = 60 w (pep) i cq = 200 ma f1 = 2000.0 mhz f2 = 2000.1 mhz g pe imd g pe p out 3rd order 7th order 5th order p in = 7 w 5 w 600 ma v cc = 26 vdc f 1 = 2000.0 mhz f 2 = 2000.1 mhz 400 ma 200 ma i cq = 100 ma v cc = 26 vdc i cq = 200 ma f 1 = 2000.0 mhz f 2 = 2000.1 mhz 8 45 30 10 50 70 100 ma i cq = 600 ma 400 ma 200 ma v cc = 26 vdc f 1 = 2000.0 mhz f 2 = 2000.1 mhz 11.5 10.5 9.5 8.5 3 w v cc = 26 vdc i cq = 200 ma
5 mrf20060r MRF20060RS motorola rf device data figure 8. performance in broadband circuit f, frequency mhz) 2000 1960 1940 1920 1900 10 9 8.5 8 38 34 32 28 collector efficiency (%) input vswr g pe , gain (db) 1.3:1 1.2:1 1.1:1 9.5 36 g pe vswr h p out = 60 w (pep) v cc = 26 vdc i cq = 200 ma 1980 figure 9. mtbf factor versus junction temperature t j , junction temperature ( c) 250 200 150 100 50 0 1.e+11 1.e+10 1.e+08 1.e+07 1.e+06 1.e+05 mtbf factor (hours x amps ) this above graph displays calculated mtbf in hours x ampere 2 emitter curent. life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. divide mtbf factor by i c 2 for mtbf in a particular application. 1.e+09 2
mrf20060r MRF20060RS 6 motorola rf device data figure 10. series equivalent input and output impedence f mhz z in (1) w z ol * w 1800 1850 1900 1950 1.0 + j4.8 2.0 + j4.7 1.5 + j4.8 2.5 + j4.7 1.7 + j3.3 2.2 + j2.7 2.4 + j3.0 2.3 + j3.2 z in (1)= conjugate of fixture base terminal impedance. z ol * = conjugate of the optimum load impedance at given output power, voltage, bias current and frequency. v cc = 26 v, i cq = 200 ma, p out = 60 w (pep) +j1 +j2 +j3 +j5 + j0.5 + j0.2 j1 j2 j3 j5 j10 j0.5 j0.2 + j10 0.0 0.5 12 3 5 z ol * z in z o = 10 w 1.85 ghz 1.95 ghz 2 ghz 1.9 ghz f = 1.8 ghz 2000 3.5 + j4.7 2.0 + j3.4 f = 1.8 ghz 1.9 ghz 1.95 ghz 2 ghz 1.85 ghz 0.2
7 mrf20060r MRF20060RS motorola rf device data table 1. common emitter sparameters at v ce = 24 vdc, i c = 3.5 adc f s 11 s 21 s 12 s 22 ghz |s 11 | |s 21 | |s 12 | |s 22 | 1.5 0.986 168 0.32 81 0.031 60 0.923 169 1.55 0.985 167 0.35 76 0.031 63 0.918 169 1.6 0.981 167 0.40 70 0.032 61 0.908 169 1.65 0.973 166 0.45 63 0.030 53 0.897 169 1.7 0.968 165 0.52 56 0.033 50 0.889 168 1.75 0.951 163 0.62 46 0.028 47 0.880 169 1.8 0.914 161 0.76 32 0.027 39 0.871 170 1.85 0.851 161 0.91 12 0.024 26 0.863 171 1.9 0.789 164 1.02 15 0.015 5 0.888 174 1.95 0.810 170 0.94 44 0.005 7 0.931 174 2 0.880 172 0.75 68 0.006 151 0.953 172 2.05 0.934 170 0.57 85 0.010 152 0.967 170 2.1 0.964 168 0.45 98 0.015 158 0.965 169 2.15 0.977 165 0.36 109 0.022 164 0.955 168 2.2 0.975 163 0.30 118 0.033 165 0.950 167 2.25 0.961 161 0.25 128 0.049 160 0.947 167 2.3 0.942 160 0.22 139 0.066 149 0.938 166 2.35 0.919 157 0.19 149 0.077 142 0.931 165 2.4 0.860 156 0.17 163 0.100 137 0.922 165 2.45 0.821 159 0.15 177 0.128 122 0.914 165 2.5 0.781 161 0.14 157.0 0.156 108 0.907 165
mrf20060r MRF20060RS 8 motorola rf device data notes
9 mrf20060r MRF20060RS motorola rf device data notes
mrf20060r MRF20060RS 10 motorola rf device data notes
11 mrf20060r MRF20060RS motorola rf device data package dimensions case 45106 issue f case 451a03 issue b (mrf20060r) (MRF20060RS) m a m 0.25 (0.010) b m t style 1: pin 1. collector 2. base 3. emitter dim min max min max millimeters inches a 0.995 1.005 25.27 25.53 b 0.380 0.390 9.65 9.91 c 0.156 0.191 3.96 4.85 d 0.455 0.465 11.56 11.81 e 0.060 0.075 1.52 1.91 f 0.004 0.006 0.10 0.15 g 0.800 bsc 20.32 bsc h 0.078 0.090 1.98 2.29 k 0.117 0.137 2.97 3.48 n 0.595 0.605 15.11 15.37 q 0.120 0.130 3.05 3.30 r 0.395 0.410 10.03 10.41 seating q c r k g d n e h a t b plane 2 pl f notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension h is measured 0.030o away from flange. 2 1 3 b d k h e n 3 f c 2 1 a t seating plane dim min max min max millimeters inches a 0.615 0.625 15.62 15.88 b 0.395 0.410 10.03 10.41 c 0.156 0.191 3.96 4.85 d 0.455 0.465 11.56 11.81 e 0.060 0.075 1.52 1.91 f 0.004 0.006 0.10 0.15 h 0.078 0.090 1.98 2.29 k 0.117 0.137 2.97 3.48 n 0.595 0.605 15.11 15.37 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension h is measured 0.030o away from flange. style 1: pin 1. collector 2. base 3. emitter
mrf20060r MRF20060RS 12 motorola rf device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo para meters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all ope rating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under it s patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical imp lant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product cou ld create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motoro la, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : motorola japan ltd.; sps, technical information center, 3 201, p.o. box 5405, denver, colorado 80217. 13036752140 or 18004412447 minamiaz abu. minatoku, tokyo 1 068573 japan. 81334403569 customer focus center: 18005216274 mfax ? : rmfax0@email.sps.mot.com touchtone 1 6022446609 asia / pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, motorola fax back system us & canada only 18007741848 2, dai king street, tai po industrial estate, tai po, n.t., hong kong. http://sps.motorola.com/mfax/ 85226668334 home page : http://motorola.com/sps/ mrf20060r/d ?

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